Characteristics of pseudomorphic AlGaAs/InxGa1−xAs (0≤x≤0.25) doped-channel field-effect transistors
- 15 August 1994
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (4) , 2494-2498
- https://doi.org/10.1063/1.357608
Abstract
The pseudomorphic properties of doped‐channel field‐effect transistors have been thoroughly investigated based on AlGaAs/InxGa1−xAs (0≤x≤0.25) heterostructures with different In contents. Through various analytical schemes and device characterization, we observed that by introducing a 150 Å strained In0.15Ga0.85As channel we can enhance device performance; however, this strained channel is not stable after high‐temperature heat treatment. By further increasing the In content up to x=0.25, the device performance started to degrade, which is associated with strain relaxation in this highly strained channel.This publication has 9 references indexed in Scilit:
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