Voltage noise in an AlxGa1−xAs-GaAs heterostructure

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Abstract
Voltage noise in an heterostructure consisting of a Si‐doped Al0.34Ga0.66As layer grown on a not‐intentionally doped GaAs layer was investigated in the temperature range 80–330 K and in the frequency range of 1 Hz–100 kHz. The noise consisted of three types: thermal noise, which is independent of the frequency, 1/f‐noise, and generation‐recombination noise. The generation‐recombination noise is associated with trapping and detrapping of charge carriers. The relaxation times show thermally activated behavior, and the activation energies obtained from Arrhenius plots are 810±20, 400±30, and 235±17 meV. These data are compared with those obtained from relatively thick AlxGa1−xAs layers.