Highly selective etching of InGaAs on InAlAs in HBr plasma
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Self-aligned gate recess technology for the fabrication of InAlAs/InGaAs HEMT structures, using InAlAs as an etch-stop layerPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistorsIEEE Transactions on Electron Devices, 1992
- Highly uniform N-InAlAs/InGaAs HEMT's on a 3-in InP substrate using photochemical selective dry recess etchingIEEE Electron Device Letters, 1992
- Selective Dry Etching of AlGaAs-GaAs HeterojunctionJapanese Journal of Applied Physics, 1981