New method for the study of mirror heating of a semiconductor laser diode and for the determination of thermal diffusivity of the entire structure
- 31 October 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (18) , 2266-2268
- https://doi.org/10.1063/1.112713
Abstract
A new method based on the photothermal deflection technique is described to determine the mirror temperature of a semiconductor laser diode as a function of intensity of drive current. The device’s effective thermal diffusivity can also be measured. A short theoretical discussion is presented together with experimental measurements performed on three different kinds of laser diodes.Keywords
This publication has 7 references indexed in Scilit:
- Mirror temperature of a semiconductor diode laser studied with a photothermal deflection methodJournal of Applied Physics, 1993
- On the photodeflection method applied to low thermal diffusivity measurementsReview of Scientific Instruments, 1993
- Local mirror temperatures of red-emitting (Al)GaInP quantum-well laser diodes by Raman scattering and reflectance modulation measurementsApplied Physics Letters, 1992
- Evidence for current-density-induced heating of AlGaAs single-quantum-well laser facetsApplied Physics Letters, 1991
- Extremely low threshold current AlGaAs buried-heterostructure quantum well lasers grown by liquid phase epitaxyApplied Physics Letters, 1990
- Mapping of local temperatures on mirrors of GaAs/AlGaAs laser diodesApplied Physics Letters, 1990
- Photothermal deflection spectroscopy and detectionApplied Optics, 1981