Extremely low threshold current AlGaAs buried-heterostructure quantum well lasers grown by liquid phase epitaxy
- 31 December 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (27) , 2873-2875
- https://doi.org/10.1063/1.103762
Abstract
Data are presented on AlGaAs single quantum well buried-heterostructure lasers grown by two-step liquid phase epitaxy (LPE). The base laser structures were grown by low-temperature LPE in the temperature interval of 600–400 °C. Broad-area threshold current densities of 300 A/cm2 were measured for 1-mm-long lasers. The buried heterostructure was formed in the second LPE process including in situ selective mesa melt etching. Threshold currents of 1.3 mA in a continuous regime were obtained for uncoated lasers having 125-μm-long cavities.Keywords
This publication has 3 references indexed in Scilit:
- Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried-heterostructure quantum well lasers grown by molecular beam epitaxyApplied Physics Letters, 1989
- Ultralow threshold graded-index separate-confinement heterostructure single quantum well (Al,Ga)As lasersJournal of Vacuum Science & Technology B, 1988
- Ultra-low threshold, graded-index waveguide, separate confinement, CW buried-heterostructure lasersElectronics Letters, 1982