Imaging of boron dopant in highly oriented diamond films by cathodoluminescence in a transmission electron microscope
- 18 July 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (3) , 292-294
- https://doi.org/10.1063/1.112350
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Highly oriented, textured diamond films on silicon via bias-enhanced nucleation and textured growthJournal of Materials Research, 1993
- Hall effect measurements on boron-doped, highly oriented diamond films grown on silicon via microwave plasma chemical vapor depositionApplied Physics Letters, 1993
- Textured growth of diamond on silicon via in situ carburization and bias-enhanced nucleationApplied Physics Letters, 1993
- On the ‘‘band-A’’ emission and boron related luminescence in diamondApplied Physics Letters, 1992
- Characterization of bias-enhanced nucleation of diamond on silicon byinvacuosurface analysis and transmission electron microscopyPhysical Review B, 1992
- Effects of boron doping on the surface morphology and structural imperfections of diamond filmsDiamond and Related Materials, 1992
- Cathodoluminescence investigation of impurities and defects in single crystal diamond grown by the combustion-flame methodApplied Physics Letters, 1992
- Investigation of Cvd-Grown Diamond by Cathodoluminescence in TEMMRS Proceedings, 1992
- Cathodoluminescence from diamond films grown by plasma-enhanced chemical vapor deposition in dilute CO/H2, CF4/H2, and CH4/H2 mixturesApplied Physics Letters, 1991
- Cathodoluminescence imaging of defects and impurities in diamond films grown by chemical vapor depositionJournal of Applied Physics, 1991