Dissociation kinetics of hydrogen-passivated (100) Si/SiO2 interface defects
- 15 June 1995
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 77 (12) , 6205-6207
- https://doi.org/10.1063/1.359148
Abstract
The activation energy for thermal dissociation of hydrogen from silicon dangling‐bond defects (Pb centers) has been measured using both (111)‐ and (100)‐oriented samples. The behavior of each of the three Pb varieties [P111b at the (111) interface, P100b0 and P100b1 at the (100) interface] is compared. For P111b, excellent agreement with previous results by Brower [Phys. Rev. B 42, 3444 (1990)] is obtained. The activation energies of the (100)‐interface Pb centers are slightly higher, assuming the same vibrational frequency, and, unlike that of P111b, are affected by a postoxidation anneal.This publication has 13 references indexed in Scilit:
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