Technology for nanoelectronic devices based on ultra-high vacuum scanning tunneling microscopy on the Si(100) surface
- 1 May 1999
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 46 (1-4) , 133-136
- https://doi.org/10.1016/s0167-9317(99)00035-0
Abstract
No abstract availableKeywords
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