The nature of the dominant γ-induced defects in high-purity germanium

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Abstract
For relatively low Co-60 γ-irradiation doses (3 × 1015 γ cm−2) and dose rates (2.0 × 1010 γ cm−2 sec−1), two hole traps (E v+0.23 eV, E v+0.38 eV) are the dominant defects introduced in highpurity p-type germanium. A comprehensive study involving crystals grown under a wide variety of conditions supports the hypothesis that these centers are most likely due to complexes between oxygen and lattice vacancies. Injection-enhanced annealing was observed for both these holetrapping states, and a discussion is given of the seemingly dose-dependent nature of the defects produced in γ-irradiated high-purity p-type germanium.