Extremely low resistivity, high electron concentration ZnSe grown by planar-doping method
- 7 December 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (23) , 2811-2813
- https://doi.org/10.1063/1.108045
Abstract
The n-type ZnSe with electron concentration up to 3×1020 cm−3 and low resistivity down to 1×10−4 Ω cm has been grown using a planar-doping technique of chlorine during molecular beam epitaxy. The photoluminescence evaluation shows that the planar-doped ZnSe layers are superior to uniformly doped ones especially for the case of high Cl doping. The in-depth profile of Cl concentration in a planar-doped sample was measured with a secondary ion mass spectroscopy (SIMS). The SIMS analysis shows only slight diffusion of the incorporated Cl atoms even in highly doped samples.Keywords
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