Thermal decomposition of triethylgallium on GaAs(100) in the presence of Al and In
- 1 November 1992
- journal article
- Published by Elsevier in Surface Science
- Vol. 278 (1-2) , 121-130
- https://doi.org/10.1016/0039-6028(92)90588-w
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Reaction kinetics for the CBE growth of GaAs from triethylgallium; computer modelling studies incorporating recent surface spectroscopic dataJournal of Crystal Growth, 1992
- Surface chemical studies of the influence of In and Al on the decomposition of TEG on GaAs(100)Journal of Crystal Growth, 1992
- Comparative studies of the surface reactivity of triethylgallium on semiconductor and dielectric surfacesJournal of Physics: Condensed Matter, 1991
- The adsorption and reaction of triethylgallium on GaAs(100)Surface Science, 1991
- Thermal decomposition of alkyl halides on aluminum. 1. Carbon-halogen bond cleavage and surface .beta.-hydride elimination reactionsJournal of the American Chemical Society, 1991
- Products of thermal decomposition of triethylgallium and trimethylgallium adsorbed on Ga-stabilized GaAs(100)Surface Science, 1990
- Surface chemical processes in metal organic molecular-beam epitaxy; Ga deposition from triethylgallium on GaAs(100)Journal of Applied Physics, 1990
- Progress in chemical beam epitaxyJournal of Crystal Growth, 1990
- Methyl exchange reaction of trimethylindium on GaAs(100) and the preferential etching of galliumSurface Science, 1990
- Substrate temperature dependence of GaAs, GaInAs, and GaAlAs growth rates in metalorganic molecular beam epitaxyApplied Physics Letters, 1987