Electric field effects on radiation defects annealing in p-InP
- 30 June 1983
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 46 (9) , 673-675
- https://doi.org/10.1016/0038-1098(83)90504-5
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Electron irradiation induced deep levels in p-InPApplied Physics Letters, 1982
- The Motion of Deep Donor Centres in Reverse Biased n-GaAs Surface Barrier DiodesPhysica Status Solidi (a), 1982
- Mobility of copper centers in reverse-biased germanium junction diodesApplied Physics Letters, 1982
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Mobility of Radiation-Induced Defects in GermaniumJournal of Applied Physics, 1961
- Ion Drift in an n-p JunctionJournal of Applied Physics, 1960