Continuous Growth of High Purity InP/InGaAs on InP Substrate by Vapor Phase Epitaxy

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Abstract
Growth conditions and crystal properties for InP and InGaAs layers successively grown by vapor phase epitaxy are described. After InGaAs lattice-matched to a (100) InP substrate is deposited, InP is successively grown by using a sliding substrate holder and changing the growth temperature profile. Optimum growth conditions to reduce etch pit density and unwanted interface states at the heterointerface are discussed. Planar InP/InGaAs photodiodes fabricated from grown crystals have dark current density of 2.4×10-5 A/cm2 at -40 V. Carrier densities for InP and InGaAs are about 3.5×1015 cm-3, which is suitable for photodiodes with small capacitance.