cw room-temperature operation of GaAlAs single quantum well visible (7300 Å) diode lasers at 100 mW

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Abstract
100-mW room-temperature cw laser operation at 7300 Å has been achieved in a Ga1−xAlxAs (x∼0.22), ∼300 Å thick, single quantum well double heterostructure diode grown by organometallic vapor phase epitaxy. The proton-delineated stripe contact is 6 μm wide, and the front and rear laser facets are coated for antireflection and high reflection respectively. The cw threshold current is 86 mA for a 250-μm-long device, and linear output power versus current characteristics are observed up to 100 mW with an external differential quantum efficiency of 1 W/A (59%). cw output power exceeds 13 mW at 100 °C. Between 25–55 °C, the pulsed threshold current varies exponentially with temperature T as exp(T/T0), where T0∼187 K.