Resonant cavity enhanced GaInAsSb photodetectorsgrown by MBE for room temperature operation at 2.35 µm
- 21 November 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (24) , 2268-2270
- https://doi.org/10.1049/el:19961505
Abstract
Resonant cavity enhanced photodetectors based on GaInAsSb have been successfully fabricated and characterised to operate at a resonant wavelength of 2.35 µm at room temperature. The photodetectors show a maximum quantum efficiency of η = 63%, a peak responsivity of R = 1.21 A/W and a detectivity D* of 5.84 × 109 cmHz1/2W-1 at –0.5 V bias at the resonant wavelength.Keywords
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