Resonant cavity enhanced GaInAsSb-AlAsSb photodetector grown by MBE for mid-IR applications
- 1 May 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 8 (5) , 667-669
- https://doi.org/10.1109/68.491574
Abstract
Resonant cavity enhanced photodetectors based on GaInAsSb-AlAsSb grown by MBE have been successfully fabricated and characterized to operate at near 2 μm wavelength range. By incorporating a 10-pair lattice matched AlAsSb-GaSb quarter wavelength reflector, strong cavity enhancement of photoresponse and post-growth selectivity of the resonant wavelength have been realized. The photodetectors have shown record setting room temperature performance with a maximum quantum efficiency of /spl eta/=85%, a peak responsivity of R=1.3 A/W and a detectivity D* of 1.35×10/sup 10/ cm Hz 1 2/ W/sup -1/ at -0.5-V bias at resonant wavelength.Keywords
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