Amorphization of Silicon by Ion Irradiation: The Role of the Divacancy
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- High-resolution imaging of ion-implantation damage and mechanism of amortization in semiconductorsMaterials Letters, 1984
- The crystalline to amorphous transformation in siliconNuclear Instruments and Methods in Physics Research, 1983
- The effects of annealing upon the accumulation of amorphousness in a composite model of disorder productionRadiation Effects, 1981
- Amorphization of silicon by ion implantation: Homogeneous or heterogeneous nucleation?Radiation Effects, 1976
- Ion implantation in semiconductors—Part II: Damage production and annealingProceedings of the IEEE, 1972
- Damaged regions in neutron-irradiated and ion-bombarded Ge and SiRadiation Effects, 1971
- Infrared studies of the crystallinity of ion-implanted SiRadiation Effects, 1970
- A model for the formation of amorphous Si by ion bombardmentRadiation Effects, 1970
- Relation of neutron to ion damage annealing in Si and GeRadiation Effects, 1969