A pseudopotential calculation of the subband structure over the two-dimensional Brillouin zone in a GaAs quantum well

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Abstract
The authors present an empirical pseudopotential many band calculation for the subband dispersion parallel to the layers for a Ga1-xAlxAs-barrier-GaAs-well system. They match bulk complex band wavefunctions at the interfaces and propagate the solution using scattering matrix formalism. The results are important both for parallel transport properties and for the density of states needed in optical work. For points in the surface Brillouin zone along symmetry directions far from the Gamma point the calculation shows a splitting of the lowest two localized subband states that exist. They interpret the results from the wavefunctions generated and mixing of the relevant bulk states.