Temperature-dependent surface morphologies for Br-etched Si(100)-2×1
- 15 August 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 50 (7) , 4430-4438
- https://doi.org/10.1103/physrevb.50.4430
Abstract
Temperature-dependent surface morphologies resulting from spontaneous Br etching of Si(100)-2×1 in the range 600–1100 K have been studied using scanning tunneling microscopy. The etch pits and Si structures on the exposed surfaces exhibit temperature-dependent shape, size, and distribution characteristics. Although the morphology depends on temperature, the steady-state removal of Si is dominated by layer-by-layer etching that produces bounded surface roughness. Temperature-dependent kinetics, surface reactivities, and product evolution are responsible for the different morphologies.Keywords
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