Photoluminescence determination of effects due to In in In-alloyed semi-insulating GaAs

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Abstract
Photoluminescence measurements at 2 and 2–40 K were made to study effects due to In alloying for InxGa1−xAs semi-insulating substrate materials grown by the liquid-encapsulated Czochralski method. The neutral CAs bound exciton is a good photoluminescence transition to determine a small variation of In composition in the range of 0≤x≤0.014. The band-gap reduction ΔEg (eV) can be expressed by −1.59x. The radial nonuniformity of In concentration and photoluminescence intensity were determined. The axial segregation of In was also analyzed with the help of the neutron activation analysis and spark-source mass spectrometry.