Coulomb Charging Effect in Self-Assembled Ge Quantum Dots Studied by Admittance Spectroscopy
- 13 April 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 80 (15) , 3340-3343
- https://doi.org/10.1103/physrevlett.80.3340
Abstract
Quantum confined energy levels and the Coulomb charging effect of holes in self-assembled Ge dots embedded in Si barriers are studied using admittance spectroscopy at temperatures above 100 K. Ground state and first excited state occupancies of five to seven holes are identified by varying the Fermi-level position under different applied bias voltages in the admittance measurements. Hole-capture cross sections of the quantum levels are found to be extremely large and energy dependent.Keywords
This publication has 12 references indexed in Scilit:
- Electrons in artificial atomsNature, 1996
- Deep level transient spectroscopy of InP quantum dotsApplied Physics Letters, 1995
- Electron and hole energy levels in InAs self-assembled quantum dotsApplied Physics Letters, 1995
- Spectroscopy of Quantum Levels in Charge-Tunable InGaAs Quantum DotsPhysical Review Letters, 1994
- N-electron ground state energies of a quantum dot in magnetic fieldPhysical Review Letters, 1993
- Observation of Single-Electron Charging in Double-Barrier HeterostructuresScience, 1992
- Transport spectroscopy of a Coulomb island in the quantum Hall regimePhysical Review Letters, 1991
- Spectroscopy of electronic states in InSb quantum dotsPhysical Review Letters, 1989
- Zeeman bifurcation of quantum-dot spectraPhysical Review Letters, 1989
- Conductance and capacitance studies in GaP Schottky barriersJournal of Applied Physics, 1975