MBE growth of InAs/AlInAs strained-layer multi quantum wells for optical device applications
- 2 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4) , 210-214
- https://doi.org/10.1016/0022-0248(89)90385-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- InAs strained-layer quantum wells with band gaps in the 1.2–1.6 μm wavelength rangeApplied Physics Letters, 1988
- Optical investigations of the band structure of strained InAs/AlInAs quantum wellsApplied Physics Letters, 1988
- Room-temperature CW operation of MBE-grown GaInAs/AlInAs mow lasers in 1.5 μ m rangeElectronics Letters, 1987
- Effects of coherency strain on the band gap of pseudomorphic InxGa1−xAs on (001) InPApplied Physics Letters, 1987
- Calculation of the conduction band discontinuity for Ga0.47In0.53As/Al0.48In0.52As heterojunctionJournal of Applied Physics, 1984