High-purity GaAs layers grown by low-pressure metalorganic chemical vapor deposition
- 16 October 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (16) , 1677-1679
- https://doi.org/10.1063/1.102233
Abstract
We report electrical and optical properties of very high purity GaAs epilayers grown by low‐pressure metalorganic chemical vapor deposition using AsH3 and triethylgallium as As and Ga sources. An electron mobility of 335 000 cm2/V s at 38 K has been measured for a 12‐μ‐thick layer.Keywords
This publication has 5 references indexed in Scilit:
- Shallow donors in very pure GaAs grown by gas source molecular beam epitaxyApplied Physics Letters, 1988
- Low compensation vapor phase epitaxial gallium arsenideApplied Physics Letters, 1983
- Electrical characterization of epitaxial layersThin Solid Films, 1976
- Self-compensation of donors in high-purity GaAsApplied Physics Letters, 1975
- Polariton Reflectance and Photoluminescence in High-Purity GaAsPhysical Review B, 1973