Shallow donors in very pure GaAs grown by gas source molecular beam epitaxy
- 3 October 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (14) , 1285-1287
- https://doi.org/10.1063/1.99999
Abstract
We report photoluminescence and transport studies of a very pure GaAs layer grown by gas source molecular beam epitaxy methods. A peak mobility of 300 000 cm2/V s is observed at 60 K. A very shallow donor with binding energy less than 2 meV is observed.Keywords
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