Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques
- 5 January 2005
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 86 (2) , 021914
- https://doi.org/10.1063/1.1851619
Abstract
Room-temperature nonradiative lifetime of the near-band-edge excitonic photoluminescence (PL) peak in {0001} polar, , , and (001) nonpolar was shown to increase with the decrease in density or size of vacancies and with the decrease in gross density of point defects including complexes, leading to the increase in the PL intensity. As the edge threading dislocation density decreased, density or size of tended to decrease and tended to increase. However, there existed remarkable exceptions. The results indicate that nonradiative recombination process is governed not by single point defects, but by certain defects introduced with the incorporation of , such as -defect complexes.
Keywords
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