Mechanism of pulsed laser-induced amorphization of silicon films
- 18 November 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (21) , 2724-2726
- https://doi.org/10.1063/1.105896
Abstract
Amorphization and crystallization were studied through homogeneous solidification of molten silicon layers on quartz substrates induced by irradiation with a 30 ns XeCl excimer laser. The crystalline nucleation rate was obtained to be 8×1030 m−3 s−1. Silicon films were completely amorphized for films thinner than 18 nm due to the fact that grain growth is reduced as film thickness decreases. It was also experimentally determined that recalescence caused by latent heat released at solidification can cause grain growth.Keywords
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