Metalorganic molecular beam epitaxial growth of InP/GaInAs multiquantum wells for infrared photodetection
- 29 July 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (5) , 552-554
- https://doi.org/10.1063/1.105411
Abstract
Multiquantum well structures of InP/Ga0.47In0.53As were grown by metalorganic molecular beam epitaxy for the fabrication of infrared photodetectors. The thickness and composition uniformity of the wells was determined by high‐resolution x‐ray diffraction, photoluminescence, and photoluminescence excitation experiments. The intersubband absorption spectrum of the multiquantum well structures optimized for infrared detection is found to be in the 7–8 μm range.Keywords
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