Simulation Of ULSI Silicon MOSFETs
- 25 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Hot-carrier luminescence in SiPhysical Review B, 1992
- Scaling the Si metal-oxide-semiconductor field-effect transistor into the 0.1-μm regime using vertical doping engineeringApplied Physics Letters, 1991
- Impact of the vertical SOI 'DELTA' structure on planar device technologyIEEE Transactions on Electron Devices, 1991
- Transient Phosphorus Diffusion Below the Amorphization ThresholdJournal of the Electrochemical Society, 1991
- Quantum effects in Si n-MOS inversion layer at high substrate concentrationSolid-State Electronics, 1990
- Low-voltage hot-electron currents and degradation in deep-submicrometer MOSFETsIEEE Transactions on Electron Devices, 1990
- A general purpose device simulator coupling Poisson and Monte Carlo transport with applications to deep submicron MOSFETsIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1989
- A physically based mobility model for numerical simulation of nonplanar devicesIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1988
- Transport equations for electrons in two-valley semiconductorsIEEE Transactions on Electron Devices, 1970
- Diffusion of Hot and Cold Electrons in Semiconductor BarriersPhysical Review B, 1962