Electron mobility-lifetime product and D° defect density in hydrogenated amorphous silicon
- 1 December 1989
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 114, 420-422
- https://doi.org/10.1016/0022-3093(89)90604-2
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- The investigation of excess carrier lifetimes in amorphous silicon by transient methodsJournal of Non-Crystalline Solids, 1984
- Disorder effects on deep trapping in amorphous semiconductorsPhilosophical Magazine Part B, 1984