Studies of interface states of silicon metal-oxide-semiconductor devices by dynamic conductance and noise measurements and effects of bias-temperature stresses

This publication has 16 references indexed in Scilit:

• A model of interface states and charges at the Si-SiO2 interface: Its predictions and comparison with experiments
  Journal of Applied Physics, 1981
• Flicker Noise in Electronic Devices
  Published by Elsevier ,1979
• Stable and unstable surface state charge in thermally oxidized silicon
  Solid-State Electronics, 1976
• Non-ionic room temperature instabilities in MOS devices
  Solid-State Electronics, 1974
• Electrical characteristics of the SiO2Si interface near midgap and in weak inversion
  Solid-State Electronics, 1974
• A Quantitative Theory of 1/fType Noise Due to Interface States in Thermally Oxidized Silicon
  Bell System Technical Journal, 1967
• Stabilization of MOS devices
  Solid-State Electronics, 1967
• The Si-SiO₂Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
  Bell System Technical Journal, 1967
• Instabilities of MOS Structure
  Japanese Journal of Applied Physics, 1967
• Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized Silicon
  Journal of the Electrochemical Society, 1967