Role of Oxygen in (Zn, O) Doped GaP

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Abstract
A study of the temperature dependence of the decay time and luminescent intensity of the infrared emission in (Zn, O) doped GaP has unambiguously identified this emission at room temperature as a radiative transition resulting from the recombination of a bound electron at an oxygen donor with a free hole in the valence band. From the temperature dependence of the decay time and the variation of the decay times as a function of free-hole concentration at room temperature, it is concluded that the recombination of the bound electron at an oxygen donor with the free hole is primarily radiative.