A novel GaInNAs-GaAs quantum-well structure for long-wavelength semiconductor lasers
- 1 November 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 9 (11) , 1448-1450
- https://doi.org/10.1109/68.634704
Abstract
We propose a novel quantum-well (QW) structure for GaInNAs-GaAs lasers that can emit 1.3 μm or longer wavelength light. The idea is insertion of lattice-matched GaInNAs intermediate layers between well and barrier, which is effective for elongating the emission wavelength and reducing well thickness. It is shown that 1.3-μm emission is achievable by using the proposed GaInNAs-GaAs QW with a well thickness thinner than that of conventional rectangular GaInNAs QWs. This structure will relax the design limitation of strained GaInNAs layers.Keywords
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