X-ray diffraction study of P-doped polycrystalline Si thin films used in ULSI devices
- 30 September 1992
- journal article
- Published by Elsevier in Materials Letters
- Vol. 14 (5) , 303-306
- https://doi.org/10.1016/0167-577x(92)90042-i
Abstract
No abstract availableKeywords
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