Trap distribution in gold-refractory/GaAs Schottky barriers
- 30 April 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (4) , 329-338
- https://doi.org/10.1016/0038-1101(85)90093-0
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Schottky barrier height variation with metallurgical reactions in aluminum-titanium-gallium arsenide contactsSolid-State Electronics, 1983
- TiW Silicide gate self-alignment technology for ultra-high-speed GaAs MESFET LSI/VLSI'sIEEE Transactions on Electron Devices, 1982
- Reduction of Long-Term Transient Radiation Response in Ion Implanted GaAs FETsIEEE Transactions on Nuclear Science, 1982
- The thermal stability of thin layer transition and refractory metallizations on GaAsJournal of Vacuum Science and Technology, 1980
- Ideality and noise figure characteristics of r.f. sputtered millimetre GaAs diodesElectronics Letters, 1980
- Interdiffusion and Degradation of Si/Cr/Pt/Ag IMPATT Diode MetallizationJournal of the Electrochemical Society, 1979
- Reactions of vacuum-deposited thin Schottky barrier metallizations on gallium arsenideJournal of Vacuum Science and Technology, 1979
- A Degradation Mechanism for Ohmic Contacts in GaAs DevicesJapanese Journal of Applied Physics, 1977
- Bulk and interface imperfections in semiconductorsSolid-State Electronics, 1976
- Experiments on the origin of process−induced recombination centers in siliconJournal of Applied Physics, 1975