Hydrogen passivation of dislocations in silicon
- 15 November 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (10) , 1135-1137
- https://doi.org/10.1063/1.95045
Abstract
The electron beam induced current method has been used to show that the principal defects passivated by hydrogen in silicon ribbon grown by the edge-defined film-fed growth technique are, in fact, dislocations. Hydrogen diffusivity for dislocation arrays has been determined to be ≥10−8 cm2/s. It is shown that deep, intragranular passivation depths of up to 250 μm can occur by hydrogen diffusion along dislocation arrays. A model is proposed wherein grain boundary passivation is viewed as a special case of dislocation passivation.Keywords
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