Palladium- and platinum-related levels in silicon: Effect of a hydrogen plasma

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Abstract
The neutralization of deep-level centers associated with palladium and platinum in silicon after exposure to a low-pressure hydrogen plasma has been observed using transient junction-capacitance spectroscopy. In n-type silicon, a palladium-related level at Ec −0.22 eV and platinum-related level at Ec −0.28 eV were neutralized by a low-temperature (300 °C) plasma treatment. In p-type silicon, a palladium-related level at Ev +0.32 eV was also neutralized by this treatment, but a platinum-related level at Ev +0.33 eV was unaffected by hydrogen plasma exposure. Possible mechanisms for the observed reduction in defect electrical activity are discussed.