Photocathodic reactions at p-InP
- 28 February 1983
- journal article
- Published by Elsevier in Solar Energy Materials
- Vol. 7 (4) , 421-429
- https://doi.org/10.1016/0165-1633(83)90015-1
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology (56740177)
This publication has 12 references indexed in Scilit:
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- 11.5% solar conversion efficiency in the photocathodically protected p-InP/V3+-V2+-HCI/C semiconductor liquid junction cellApplied Physics Letters, 1981
- Interfacial electron transfer as a significant step in photoelectrochemical reactions on some semiconductorsJournal of Applied Physics, 1981
- An efficient photocathode for semiconductor liquid junction cells: 9.4% solar conversion efficiency with p-InP/VCl3-VCl2-HCl/CJournal of the American Chemical Society, 1980
- Some electrochemical processes at the n- and p-InP electrodesJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1978
- Study of the schottky barrier at the n- and p-type indium phosphide electrode/electrolyte interfaceJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1978
- The Rate of the Photoelectrochemical Generation of Hydrogen at p‐Type SemiconductorsJournal of the Electrochemical Society, 1977
- Photoelectrolysis and physical properties of the semiconducting electrode WO2Journal of Applied Physics, 1977
- 酸性水溶液中におけるp型InP電極上での光電極反応による水素の発生Denki Kagaku oyobi Kogyo Butsuri Kagaku, 1976