Picosecond electro-optic sampling system
- 1 August 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (3) , 211-212
- https://doi.org/10.1063/1.93485
Abstract
We report the construction of a sensitive electro‐optic sampling system for the measurement of ultrafast electrical transients. This system has a temporal resolution of lessthan 4 ps (over 100‐ GHz bandwidth), better than 50‐μV sensitivity and potential for a temporal resolution reaching the single picosecond. Demonstrated applications are ultrafast photodetector response characterization and time resolved photoconductivity.Keywords
This publication has 11 references indexed in Scilit:
- Picosecond photoconductivity in germanium filmsApplied Physics Letters, 1981
- Picosecond photoconductivity in radiation-damaged silicon-on-sapphire filmsApplied Physics Letters, 1981
- Picosecond optoelectronic detection, sampling, and correlation measurements in amorphous semiconductorsApplied Physics Letters, 1980
- An amorphous silicon photodetector for picosecond pulsesApplied Physics Letters, 1980
- High-speed InP optoelectronic switchApplied Physics Letters, 1979
- High-power switching with picosecond precisionApplied Physics Letters, 1979
- Measurements on the photoconductive lifetime of carriers in GaAs by optoelectronic gating techniqueOptics Communications, 1977
- Picosecond optoelectronic switching in GaAsApplied Physics Letters, 1977
- 50 picosecond detector laser pulse monitorReview of Scientific Instruments, 1976
- Picosecond optoelectronic switching and gating in siliconApplied Physics Letters, 1975