Reliability of the band discontinuity determination by capacitance-voltage method: Relation of the interface charge density and the trap concentration near the interface
- 1 August 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 174 (1-3) , 324-330
- https://doi.org/10.1016/0039-6028(86)90430-9
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- A Capacitance Investigation of InGaAs/InP Isotype HeterojunctionJapanese Journal of Applied Physics, 1983
- Deep levels in In0.53Ga0.47 As/InP heterostructuresJournal of Applied Physics, 1982
- Observation of deep levels associated with the GaAs/AlxGa1−xAs interface grown by molecular beam epitaxyApplied Physics Letters, 1982
- Measurement of isotype heterojunction barriers by C-V profilingApplied Physics Letters, 1980