Be doping of liquid-phase-epitaxial InP
- 1 June 1979
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (6) , 4469-4470
- https://doi.org/10.1063/1.326408
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Zinc contamination and misplaced p-n junctions in InP–GaInPAs d.h. lasersElectronics Letters, 1978
- Simple pressurized chambers for liquid encapsulated czochralski crystal growthJournal of Crystal Growth, 1978
- GaInAsP-InP Double Heterostructure Lasers Prepared by a New LPE ApparatusJapanese Journal of Applied Physics, 1976
- In situ in etching technique for l.p.e. InPElectronics Letters, 1976
- Digital filters using read-only memoriesElectronics Letters, 1976
- Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniquesJournal of Crystal Growth, 1974
- Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniquesJournal of Crystal Growth, 1974
- Indium PhosphideJournal of the Electrochemical Society, 1973
- Growth and Characterization of InP-lnGaAsP Lattice-Matched HeterojunctionsJournal of the Electrochemical Society, 1973
- Three-level oscillator: a new form of transferred-electron deviceElectronics Letters, 1970