Electron mobility in heavily doped and compensated gallium arsenide due to scattering by potential fluctuations
- 20 May 1985
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 18 (14) , L377-L381
- https://doi.org/10.1088/0022-3719/18/14/005
Abstract
The electron mobility at 77K of heavily doped and compensated gallium arsenide is calculate assuming the predominant scattering comes from a smooth random potential due to a large number of charged impurities with correlated impurity distribution. The nonparabolicity of a conduction band is taken into account at large electron concentrations. A set of samples with given compensation ratios and electron concentrations has been used for experimental verification of the model which explains well the experimental mobilities.Keywords
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