Recombination of Localized Excitons in InGaN Single- and Multiquantum-Well Structures
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Spontaneous emission mechanisms of InGaN single quantum well (SQW) blue and green light emitting diodes (LEDs) and multiquantum well (MQW) laser diode (LD) structures were investigated. Their static electroluminescence (EL) peak was assigned to the recombination of excitons localized at certain potential minima in the quantum well (QW). The transmission electron micrographs (TEM) indicated fluctuation of In molar fraction in the QWs. The blueshift of the EL peak caused by the increase of the driving current was explained by combined effects of the quantum-confinement Stark effect and band filling of the localized states by excitons.Keywords
This publication has 13 references indexed in Scilit:
- Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire SubstratesJapanese Journal of Applied Physics, 1996
- Shortest wavelength semiconductor laser diodeElectronics Letters, 1996
- Excitonic emissions from hexagonal GaN epitaxial layersJournal of Applied Physics, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Model for Lasing Oscillation due to Bi-Excitons and Localized Bi-Excitons in Wide-Gap Semiconductor Quantum WellsJapanese Journal of Applied Physics, 1996
- Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting DiodesJapanese Journal of Applied Physics, 1995
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- CdS/CdSe intrinsic Stark superlatticesJournal of Applied Physics, 1992
- GaN Growth Using GaN Buffer LayerJapanese Journal of Applied Physics, 1991
- Optical properties of strained-layer superlattices with growth axis along [111]Physical Review Letters, 1987