Occupancy of the DX center in n-Al0.32Ga0.68As under uniaxial stress

Publisher Website
Google Scholar
Abstract
We have used the deep level transient spectroscopy signal height as a function of applied stress data and the statistics of the occupancy of the DX center to obtain the stress dependence of the thermal binding energy of the neutral DX center, EDX. We find that EDX decreases with about the same rate for uniaxial stresses along 〈100〉 and 〈111〉 directions. Our results confirm that the DX center is a highly localized center as proposed by Chadi and Chang and disagree with the model assuming the DX center being an effective mass state of the doping impurity associated with the L band.