Range profiles in self-ion-implanted crystalline Si

Range profiles of 50- and 100-keV ${}_{}{}^{30}{}_{}{}^{}\mathrm{Si}_{}^{+}{}_{}{}^{}$ ions implanted into Si(100) at room temperature with doses from 2 × ${10}^{16}$ to 1 × ${10}^{18}$ ions ${\mathrm{cm}}^{\mathrm{-}2}$, and of 2 × ${10}^{16}$ 50-keV ${}_{}{}^{30}{}_{}{}^{}\mathrm{Si}_{}^{+}{}_{}{}^{}$ ions ${\mathrm{cm}}^{\mathrm{-}2}$ in Si(100) preimplanted with 50-keV ${}_{}{}^{28}{}_{}{}^{}\mathrm{Si}_{}^{+}{}_{}{}^{}$ ions with doses from 5 × ${10}^{13}$ to 1 × ${10}^{18}$ ions ${\mathrm{cm}}^{\mathrm{-}2}$, have been studied with nuclear reaction techniques. The structural transformation of the samples was studied by Rutherford backscattering and channeling. The dependence of the range profile on the damage structure of the sample has been examined by comparing measured range profiles with those obtained in molecular-dynamics simulations. The dependence of the range profile on the polycrystalline sample structure is shown.