Thermal reliability of power insulated gate bipolar transistor (IGBT) modules
- 24 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 17, 136-141
- https://doi.org/10.1109/stherm.1996.545103
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- 2.5 kV 100 A μ-stack IGBTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Power semiconductor devices for the 1990sMicroelectronics Journal, 1993
- Recent advances in power electronicsIEEE Transactions on Power Electronics, 1992
- Thermal fatigue in silicon power transistorsIEEE Transactions on Electron Devices, 1970