2.5 kV 100 A μ-stack IGBT
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Developments in modern high power semiconductor devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 2000 V-non-punch-through-IGBT with dynamical properties like a 1000 V-IGBTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002