A 2000 V-non-punch-through-IGBT with dynamical properties like a 1000 V-IGBT
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 807-810
- https://doi.org/10.1109/iedm.1990.237039
Abstract
A 2000-V IGBT (insulated-gate bipolar transistor) based on the simple concept of the non-punch-through IGBT is presented. The devices were processed on bulk silicon material without any lifetime-killing steps. On-state voltage and turn-off losses are nearly the same as for 1000-V IGBTs. The forward-bias safe-operating area of the devices is a rectangle up to 1800 V; no latchup occurs up to the short-circuit saturation current.<>Keywords
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