Power semiconductor devices for the 1990s

This publication has 13 references indexed in Scilit:

• An overview of smart power technology
  IEEE Transactions on Electron Devices, 1991
• Characteristics of the emitter-switched thyristor
  IEEE Transactions on Electron Devices, 1991
• High-voltage current saturation in emitter switched thyristors
  IEEE Electron Device Letters, 1991
• A new MOS-gated power thyristor structure with turn-off achieved by controlling the base resistance
  IEEE Electron Device Letters, 1991
• The MOS-gated emitter switched thyristor
  IEEE Electron Device Letters, 1990
• Comparison of 300-, 600-, and 1200-V n-channel insulated gate transistors
  IEEE Electron Device Letters, 1985
• Switching speed enhancement in insulated gate transistors by electron irradiation
  IEEE Transactions on Electron Devices, 1984
• The insulated gate transistor: A new three-terminal MOS-controlled bipolar power device
  IEEE Transactions on Electron Devices, 1984
• Semiconductors for high-voltage, vertical channel field-effect transistors
  Journal of Applied Physics, 1982
• Enhancement- and depletion-mode vertical-channel m.o.s. gated thyristors
  Electronics Letters, 1979