Low-frequency noise in depletion-mode SIMOX MOS transistors
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (2) , 323-327
- https://doi.org/10.1109/16.69913
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Novel investigation of edge effects in SIMOX transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Oxygen-related activity and other specific electrical properties of SIMOXVacuum, 1991
- Performance and physical mechanisms in SIMOX MOS transistors operated at very low temperatureIEEE Transactions on Electron Devices, 1990
- Low-temperature characterization of buried-channel NMOSTIEEE Transactions on Electron Devices, 1989
- CHARGE PUMPING IN SILICON ON INSULATOR STRUCTURES USING GATED P-I-N DIODESLe Journal de Physique Colloques, 1988
- Static and dynamic transconductance model for depletion-mode transistors: a new characterization method for silicon-on-insulator materialsIEEE Electron Device Letters, 1988
- Low-noise operation in buried-channel MOSFET'sIEEE Electron Device Letters, 1985
- Flicker noise in hot electron degraded short channel MOSFETsSolid-State Electronics, 1984
- Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion—Influence of interface statesIEEE Transactions on Electron Devices, 1984
- Low frequency noise measurements on silicon-on-sapphire (SOS) MOS transistorsSolid-State Electronics, 1977