Development of ZnSe‐based white light emitting diodes with longer lifetimes of over 10,000 hr
Open Access
- 20 January 2006
- journal article
- research article
- Published by Wiley in Electrical Engineering in Japan
- Vol. 154 (4) , 42-48
- https://doi.org/10.1002/eej.20285
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Degradation mechanism limiting the lifetime of ZnSe-based white light-emitting diodesJournal of Applied Physics, 2004
- Novel Cladding Structure for ZnSe-based White Light Emitting Diodes with Longer Lifetimes of over 10,000 hJapanese Journal of Applied Physics, 2004
- ZnSe-based white LEDsJournal of Crystal Growth, 2000
- Microscopic defect induced slow-mode degradation in II–VI based blue–green laser diodesJournal of Crystal Growth, 2000
- MBE-grown laser diodes based on beryllium containing II–VI semiconductorsJournal of Crystal Growth, 1999
- An efficient preconditioning scheme for plane-wave-based electronic structure calculationsComputational Materials Science, 1999
- Kinetic model for degradation of light-emitting diodesIEEE Journal of Quantum Electronics, 1997
- Laser diodes based on beryllium-chalcogenidesApplied Physics Letters, 1997
- Molecular-beam epitaxy of beryllium-chalcogenide-based thin films and quantum-well structuresJournal of Applied Physics, 1996
- First-principles study of the compensation mechanism for nitrogen acceptors in ZnSePhysical Review B, 1995